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FDD3680
February 2001
FDD3680
100V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 25 A, 100 V. RDS(ON) = 46 m @ V GS = 10 V RDS(ON) = 51 m @ V GS = 6 V
* Low gate charge (38 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability.
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
100
(Note 1)
Units
V V A W
20 25 100 68 3.8 1.6 -55 to +175
Maximum Power Dissipation
(Note 1) (Note 1a) (Note 1b)
TJ , TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJ C RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1b)
2.2 96
C/W C/W
Package Marking and Ordering Information
Device Marking FDD3680 Device FDD3680 Reel Size 13'' Tape width 16mm Quantity 2500 units
(c)2001 Fairchild Semiconductor Corporation
FDD3680 Rev B1(W)
FDD3680
Electrical Characteristics
Symbol
WDSS IAR
TA = 25C unless otherwise noted
Parameter
(Note 1)
Test Conditions
V DD = 50 V, ID = 6.1 A
Min
Typ Max
245 6.1
Units
mJ A
Drain-Source Avalanche Ratings
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
Off Characteristics
BV DSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown V GS = 0 V, ID = 250 A Voltage Breakdown Voltage Temperature ID = 250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current V DS = 80 V, V GS = 0 V Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
100 -101 10 100 -100
V mV/C A nA nA
V GS = 20 V, V GS = -20 V
V DS = 0 V V DS = 0 V ID = 250 A
On Characteristics
V GS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
V DS = V GS ,
2
2.4 -6.5 32 61 34
4
V mV/C
ID = 250 A, Referenced to 25C V GS = 10 V, V GS = 10 V, V GS = 6 V, V GS = 10 V, V DS = 5 V, V DS = 50 V, f = 1.0 MHz ID = 6.1 A ID = 6.1 A, TJ = 125C ID = 5.8 A V DS = 5 V ID = 6.1 A V GS = 0 V,
46 92 51
m
ID(on) gFS
25 25 1735 176 53
A S
Dynamic Characteristics
Ciss Coss Crss pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
V DD = 50 V, V GS = 10 V,
ID = 1 A, RGEN = 10
14 8.5 63 21
25 17 94 34 53
ns ns ns ns nC nC nC
V DS = 50 V, V GS = 10 V
ID = 6.1 A,
38 8.1 9.2
Drain-Source Diode Characteristics and Maximum Ratings
IS V SD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while R CA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 2.9 A (Note 2) Voltage
2.9 0.73 1.3
A V
a) RJA= 40oC/ W when mounted on a 1in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
b) RJA= 96 oC/W on a minimum mounting pad.
FDD3680 Rev B1(W)
FDD3680
Typical Characteristics
40 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID , DRAIN-SOURCE CURRENT (A) 4.5V 4V 5V
1.8
1.6 VGS =4.0V 4.5V 5.0V 6.0 V10V 1
30
1.4
20
1.2
10
3.5V
0 0 2 4 6 VD S, DRAIN-SOURCE VOLTAGE (V)
0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.12 RDS(ON) ON-RESISTANCE (OHM) ,
2.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100
o
ID = 6.1A VGS = 10V
ID = 3.0A
0.08 TA = 125 C
o
0.04
TA = 25 C
o
0 125 150 175 2 4 6 8 10 T J, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
40 IS, REVERSE DRAIN CURRENT (A) VDS =5V ID , DRAIN CURRENT (A) 30
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125 C 25 C 0.1 -55 C
o o o
1
125 C 20 TA = -55 C 25 C 10
o o
0.01
0.001 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD3680 Rev B1(W)
FDD3680
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.1A 8 VD S = 15V 30V 50V CAPACITANCE (pF)
3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 35 40 0 20 40 60 80
f = 1MHz VGS = 0 V
CISS
6
4
2
COSS
CRSS
0 Q g, GATE CHARGE (nC)
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 40
Figure 8. Capacitance Characteristics.
100 ID, DRAIN CURRENT (A)
RDS(ON) LIMIT
100s 1ms 10ms 100ms 1s 10s DC
30
SINGLE PULSE RJ A = 96C/W TA = 25C
10
20
1 VGS = 10V SINGLE PULSE o RJ A = 96 C/W TA = 25 C 0.01 0.1
o
10
0.1
1
10
100
1000
0 0.1
1
10 t1 , TIME (sec)
100
1000
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
R JA(t) = r(t) + R JA RJA = 96C/W
P(pk)
t1
0.01
0.01
SINGLE PULSE
t2 TJ - T A = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD3680 Rev B1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

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